BJT current gain (β)
In a bipolar transistor a small base current controls a collector current β times larger: I_C = β · I_B. Here a current source feeds the base, so you can see the gain directly, and see it stop once the collector resistor limits the current (saturation).

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How it works
β ≈ 180 for this 2N2222. IC = β · IB = 180 × 20 µA = 3.6 mA
VCE = VCC − IC·RC = 8.4 V. The transistor is in its active region, acting as an amplifier.
VBE = 687.9 mV: like any silicon junction, about 0.6–0.7 V.
Try it on the bench
- Set I_B to 10, 20 and 40 µA: I_C follows at 180× each time.
- Set I_B to 100 µA: β × I_B would be 18 mA, but R_C allows only 12 mA. The transistor saturates and V_CE collapses to about 0.1 V.
- Open Tools… → DC sweep: sweep V_cc, plot I_C against V_CE and step I_B (10u, 20u, 30u, 40u) to draw the transistor’s output characteristics.
Parts on the bench
- Bench power supply
- Current source
- 2 × Digital multimeter
- Resistor
- NPN transistor
In the course
Zen’s Electronics Design Mastery, module “Transistors”.