Home › Lessons › Transistors and thyristors › BJT small-signal model (hybrid-π)

BJT small-signal model (hybrid-π)

Transistors and thyristors · Advanced · about 20 minutes · part of Electronics Engineering

For small signals a biased transistor is a resistor r_π between base and emitter and a current source g_m·v_be into the collector. Both come from the DC collector current: g_m = I_C ÷ V_T and r_π = β ÷ g_m. The voltage gain of a common-emitter stage is then −g_m·R_C.

BJT small-signal model (hybrid-π): the circuit on the simulator's bench

Open this lesson in the labFree, in your browser, no account needed.

How it works

Bias: Thevenin 2.11 V behind 8.25 kΩ, β ≈ 180 → I_C ≈ 1.37 mA.

g_m = I_C ÷ V_T = 53.1 mS; r_π = β ÷ g_m = 3.39 kΩ.

Gain = −g_m·R_C = -249 (C_E grounds the emitter for AC).

Try it on the bench

  1. Change R2 to 12 kΩ: more collector current, so more g_m and more gain, and a smaller r_π. Go to 15 kΩ and the transistor saturates: the small-signal model no longer applies.

Parts on the bench

In the course

Electronics Engineering, module “Transistor amplifiers”.

More on transistors and thyristors