BJT small-signal model (hybrid-π)
For small signals a biased transistor is a resistor r_π between base and emitter and a current source g_m·v_be into the collector. Both come from the DC collector current: g_m = I_C ÷ V_T and r_π = β ÷ g_m. The voltage gain of a common-emitter stage is then −g_m·R_C.

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How it works
Bias: Thevenin 2.11 V behind 8.25 kΩ, β ≈ 180 → I_C ≈ 1.37 mA.
g_m = I_C ÷ V_T = 53.1 mS; r_π = β ÷ g_m = 3.39 kΩ.
Gain = −g_m·R_C = -249 (C_E grounds the emitter for AC).
Try it on the bench
- Change R2 to 12 kΩ: more collector current, so more g_m and more gain, and a smaller r_π. Go to 15 kΩ and the transistor saturates: the small-signal model no longer applies.
Parts on the bench
- Bench power supply
- AC source
- Film capacitor
- 4 × Resistor
- NPN transistor
- Electrolytic capacitor
In the course
Electronics Engineering, module “Transistor amplifiers”.